gate-drain overlapped LDD 栅漏交叠轻掺杂漏
gate-drain overlapped device 栅漏交叠器件
gate-drain 栅漏
gate-drain voltage 栅漏电压
a gate-drain voltage 栅漏电压
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
当由栅极施加的电流足够强的时候,电子会在源极和栅极之间进行流动。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
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